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dc.contributor.authorHou, Xuen_US
dc.contributor.authorChen, Xinen_US
dc.contributor.authorJia, Xingyuen_US
dc.contributor.authorLiu, Yajinen_US
dc.contributor.authorZhang, Yonghuien_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-09-02T07:46:19Z-
dc.date.available2019-09-02T07:46:19Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.201900210en_US
dc.identifier.urihttp://hdl.handle.net/11536/152707-
dc.description.abstractThis study proposes to increase the breakdown voltage for GaN-based PIN diodes using the polarization effect, such that a thin AlGaN layer is inserted into the drift layer to modulate the electric field profiles, and by properly designing the device architecture, the electric field in the drift layer can be remarkably reduced by the polarization effect, and this enables the enhancement of the breakdown voltage. The study further investigates the parametric sensitivity of the breakdown voltage for the proposed GaN-based PIN diodes to different device structures with various drift layer thicknesses. Moreover, it is found that the position of the inserted AlGaN thin layer is also important in affecting the breakdown voltage, such that the AlGaN insertion layer reduces the electric field with the maximum intensity in the drift layer.en_US
dc.language.isoen_USen_US
dc.subjectbreakdown voltagesen_US
dc.subjectGaN-baseden_US
dc.subjectPIN diodesen_US
dc.subjectpolarization effectsen_US
dc.titlePolarization Engineering to Manipulate the Breakdown Voltage for GaN-Based PIN Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssa.201900210en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000478426800001en_US
dc.citation.woscount0en_US
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