GaN-Based Light-Emitting-Diode With a p-InGaN Layer

標題:	GaN-Based Light-Emitting-Diode With a p-InGaN Layer
作者:	Chen, P. H. Kuo, Cheng-Huang Lai, W. C. Chen, Yu An Chang, L. C. Chang, S. J. 照明與能源光電研究所 Institute of Lighting and Energy Photonics
關鍵字:	Efficiency droop;light emitting diode (LED);p-InGaN
公開日期:	1-三月-2014
摘要:	GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.
URI:	http://dx.doi.org/10.1109/JDT.2013.2293767 http://hdl.handle.net/11536/23761
ISSN:	1551-319X
DOI:	10.1109/JDT.2013.2293767
期刊:	JOURNAL OF DISPLAY TECHNOLOGY
Volume:	10
Issue:	3
起始頁:	204
結束頁:	207
顯示於類別：	期刊論文

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