完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, P. H. | en_US |
dc.contributor.author | Kuo, Cheng-Huang | en_US |
dc.contributor.author | Lai, W. C. | en_US |
dc.contributor.author | Chen, Yu An | en_US |
dc.contributor.author | Chang, L. C. | en_US |
dc.contributor.author | Chang, S. J. | en_US |
dc.date.accessioned | 2014-12-08T15:34:56Z | - |
dc.date.available | 2014-12-08T15:34:56Z | - |
dc.date.issued | 2014-03-01 | en_US |
dc.identifier.issn | 1551-319X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JDT.2013.2293767 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23761 | - |
dc.description.abstract | GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Efficiency droop | en_US |
dc.subject | light emitting diode (LED) | en_US |
dc.subject | p-InGaN | en_US |
dc.title | GaN-Based Light-Emitting-Diode With a p-InGaN Layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JDT.2013.2293767 | en_US |
dc.identifier.journal | JOURNAL OF DISPLAY TECHNOLOGY | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 204 | en_US |
dc.citation.epage | 207 | en_US |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000331967900005 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |