完整後設資料紀錄
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dc.contributor.authorGu, Siyongen_US
dc.contributor.authorHsieh, Chien-Teen_US
dc.contributor.authorGandomi, Yasser Ashrafen_US
dc.contributor.authorLi, Jianlinen_US
dc.contributor.authorYue, Xing Xingen_US
dc.contributor.authorChang, Jeng-Kueien_US
dc.date.accessioned2019-10-05T00:08:37Z-
dc.date.available2019-10-05T00:08:37Z-
dc.date.issued2019-09-21en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c9nr05422gen_US
dc.identifier.urihttp://hdl.handle.net/11536/152780-
dc.description.abstractHighly fluorescent N-doped graphene quantum dots (NGQDs) and graphitic carbon nitride quantum dots (CNQDs, g-C3N4) were synthesized using a solid-phase microwave-assisted (SPMA) technique. The SPMA method, based on the pyrolysis of citric acid and urea with different recipes, is capable of producing quantum dots with coexisting NGQDs and CNQDs at 280 degrees C within only five minutes. The photoluminescence (PL) emissions from NGQD and CNQDs are strongly dependent on the excitation wavelength and the solvent type, i.e., water, ethanol, and N-methyl pyrrolidinone. The unique attribute of the quantum dots, possessing a multiple chromophoric band-gap structure, originates from the presence of g-C3N4, defect-related emissive traps, and grain boundaries. Thus, an appropriate excitation wavelength induces a conjugated pi electron system to fulfill the most probable absorption band, resulting in wavelength-dependent emissions including ultraviolet, visible and infrared light. The quantum yield of the NGQD and CNQD samples can reach as high as 68.1%. Accordingly, a light-emitting device using the combination of the NGQD and CNQD powder embedded polymeric film can emit white-like light with ultra-high power-conversion efficiency.en_US
dc.language.isoen_USen_US
dc.titleTailoring fluorescence emissions, quantum yields, and white light emitting from nitrogen-doped graphene and carbon nitride quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c9nr05422gen_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume11en_US
dc.citation.issue35en_US
dc.citation.spage16553en_US
dc.citation.epage16561en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000485971900040en_US
dc.citation.woscount0en_US
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