標題: Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering
作者: Liu, Chien
Tung, Yi-Chun
Tseng, Chih-Yang
Wang, Wei-Chun
Chen, Hsuan-Han
Lee, Tsung-Ming
Chou, Wu-Ching
Zheng, Zhi-Wei
Cheng, Chun-Hu
Hsu, Hsiao-Hsuan
光電系統研究所
電子物理學系
Institute of Photonic System
Department of Electrophysics
公開日期: 17-九月-2019
摘要: In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories. (c) 2019 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/2.0041910jss
http://hdl.handle.net/11536/152795
ISSN: 2162-8769
DOI: 10.1149/2.0041910jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 8
Issue: 10
起始頁: 0
結束頁: 0
顯示於類別:期刊論文