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dc.contributor.authorLiu, Chienen_US
dc.contributor.authorTung, Yi-Chunen_US
dc.contributor.authorTseng, Chih-Yangen_US
dc.contributor.authorWang, Wei-Chunen_US
dc.contributor.authorChen, Hsuan-Hanen_US
dc.contributor.authorLee, Tsung-Mingen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorZheng, Zhi-Weien_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.date.accessioned2019-10-05T00:08:39Z-
dc.date.available2019-10-05T00:08:39Z-
dc.date.issued2019-09-17en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0041910jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/152795-
dc.description.abstractIn this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories. (c) 2019 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleStabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineeringen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0041910jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000486488400002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles


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