標題: Effect of a-InGaZnO TFT Channel Thickness under Self-Heating Stress
作者: Tai, Mao-Chou
Chang, Po-Wen
Chang, Ting-Chang
Tsao, Yu-Ching
Tsai, Yu-Lin
Tu, Hong-Yi
Wang, Yu-Xuan
Chen, Jian-Jie
Lin, Chih-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 18-九月-2019
摘要: In this work, indium-gallium-zinc-oxide thin film transistors (IGZO-TFTs) with different channel thicknesses were compared after self-heating stress (SHS). Although TFTs with a thicker channel have higher current during stress conditions, less degradation is reported. This degradation, manifest as the threshold voltage shift in the transfer characteristics, is well described by the stretched-exponential equation. In addition, the average effective barrier height, Et, is extracted to compare the difference in degradation between both TFTs, and finds that the barrier height in the thick channel device is twice that of the thin channel device. Finally, a COMSOL simulation is performed to demonstrate the electrical difference at the gate insulator layer and confirm such phenomena. (C) 2019 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/2.0051910jss
http://hdl.handle.net/11536/152798
ISSN: 2162-8769
DOI: 10.1149/2.0051910jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 8
Issue: 10
起始頁: 0
結束頁: 0
顯示於類別:期刊論文