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dc.contributor.authorChang, Tun-Jenen_US
dc.contributor.authorLiu, Chienen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChen, Hsuan-Hanen_US
dc.contributor.authorChen, Wan-Hsinen_US
dc.contributor.authorFan, Yu-Chien_US
dc.contributor.authorLee, Tsung-Mingen_US
dc.contributor.authorLin, Chien-Liangen_US
dc.contributor.authorMae, Junen_US
dc.contributor.authorZheng, Zhi-Weien_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorWang, Shih-Anen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2019-10-05T00:08:41Z-
dc.date.available2019-10-05T00:08:41Z-
dc.date.issued2019-08-01en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.vacuum.2019.04.045en_US
dc.identifier.urihttp://hdl.handle.net/11536/152812-
dc.description.abstractIn this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A > 10(6) stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 x 10(7) cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.en_US
dc.language.isoen_USen_US
dc.subjectFerroelectricen_US
dc.subjectHfAlOxen_US
dc.subjectThermal stabilityen_US
dc.subjectEndurance cyclingen_US
dc.subjectDomain pinningen_US
dc.titleInvestigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.vacuum.2019.04.045en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume166en_US
dc.citation.spage11en_US
dc.citation.epage14en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000472990900003en_US
dc.citation.woscount0en_US
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