標題: Improving Reliability of High-Performance Ultraviolet Sensor in a-InGaZnO Thin-Film Transistors
作者: Tsai, Yu-Lin
Chien, Yu-Chieh
Chang, Ting-Chang
Tsao, Yu-Ching
Tai, Mao-Chou
Tu, Hong-Yi
Chen, Jian-Jie
Wang, Yu-Xuan
Zhou, Kuan-Ju
Shih, Yu-Shan
Lu, I-Nien
Huang, Hui-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ultraviolet (UV) photodetector;ultraviolet (UV) sensor;a-InGaZnO TFT
公開日期: 1-Sep-2019
摘要: High-performance ultraviolet (UV) sensors using amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) can detect I-ON/I-OFF ratio up to 10(6) and match the a-IGZO panel process. However, it has a reliability issue under long-term detection. When the top gate length of the dual gate TFT is small, it is twice as reliable as a TFT where the top gate fully covers the device. The electrical properties of the device correspond to the a-IGZO energy band, such that the top gate length was positively related to the underlying energy band diagram. The integrated systems engineering technology computer aided design (ISE-TCAD) electric field simulations show that the etch stop layer (ESL) electric field is weak in the small top gate device. This means that it is difficult for the holes to either be trapped in the ESL or to generate ionized oxygen vacancies.
URI: http://dx.doi.org/10.1109/LED.2019.2929624
http://hdl.handle.net/11536/152831
ISSN: 0741-3106
DOI: 10.1109/LED.2019.2929624
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 40
Issue: 9
起始頁: 1455
結束頁: 1458
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