標題: | Interface Engineering Strategy Utilizing Electrochemical ALD of Cu-Zn for Enabling Metallization of Sub-10 nm Semiconductor Device Nodes |
作者: | Joi, Aniruddha Venkatraman, Kailash Tso, Kuang-Chih Dictus, Dries Dordi, Yezdi Wu, Pu-Wei Pao, Chih-Wen Akolkar, Rohan 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 28-Aug-2019 |
摘要: | A novel interface engineering approach, utilizing electrochemical atomic layer deposition (e-ALD) of Cu(Zn) on a Ru liner, is presented for enabling the metallization of sub-10 nm interconnects in future semiconductor devices. Upon thermal treatment, Zn present in the e-ALD Cu layer at similar to 0.8 at.% is shown to diffuse through the Ru liner and react with the SiO2 to form a Zn-silicate layer at the Ru-SiO2 interface. This 'self-forming' interfacial layer provides adhesion enhancement to the Ru-SiO2 interface and serves as a diffusion barrier retarding Cu diffusion into the SiO2 layer while enabling void-free gap-filling of high aspect ratio trench structures. Absorption Near-Edge Spectroscopy and Extended X-ray Absorption Fine Structure analyses confirm that the self-formed barrier layer is composed primarily of Zn2SiO4. The interface engineering approach utilizing Cu(Zn) presented herein offers several potential advantages over traditional Mn-based self-forming barrier approaches, i.e., scalability to narrower dimensions and minimal impact to interconnect resistance. (C) The Author(s) 2019. Published by ECS. |
URI: | http://dx.doi.org/10.1149/2.0181909jss http://hdl.handle.net/11536/152838 |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.0181909jss |
期刊: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Volume: | 8 |
Issue: | 9 |
起始頁: | 0 |
結束頁: | 0 |
Appears in Collections: | Articles |