Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition

doi:10.1109/JQE.2013.2297413

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Cheng Huang	en_US
dc.contributor.author	Chen, Yu An	en_US
dc.contributor.author	Wu, Ji Pu	en_US
dc.contributor.author	Chang, Li Chuan	en_US
dc.date.accessioned	2019-10-05T00:08:46Z	-
dc.date.available	2019-10-05T00:08:46Z	-
dc.date.issued	2014-03-01	en_US
dc.identifier.issn	0018-9197	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JQE.2013.2297413	en_US
dc.identifier.uri	http://hdl.handle.net/11536/152854	-
dc.description.abstract	Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.	en_US
dc.language.iso	en_US	en_US
dc.subject	Nano-rod arrays	en_US
dc.subject	near-ultraviolet	en_US
dc.subject	InGaN/GaN	en_US
dc.subject	LED	en_US
dc.title	Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JQE.2013.2297413	en_US
dc.identifier.journal	IEEE JOURNAL OF QUANTUM ELECTRONICS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	3	en_US
dc.citation.spage	129	en_US
dc.citation.epage	132	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.identifier.wosnumber	WOS:000483844200001	en_US
dc.citation.woscount	2	en_US
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