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dc.contributor.authorKuo, Cheng Huangen_US
dc.contributor.authorChen, Yu Anen_US
dc.contributor.authorWu, Ji Puen_US
dc.contributor.authorChang, Li Chuanen_US
dc.date.accessioned2019-10-05T00:08:46Z-
dc.date.available2019-10-05T00:08:46Z-
dc.date.issued2014-03-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2013.2297413en_US
dc.identifier.urihttp://hdl.handle.net/11536/152854-
dc.description.abstractNear-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.en_US
dc.language.isoen_USen_US
dc.subjectNano-rod arraysen_US
dc.subjectnear-ultravioleten_US
dc.subjectInGaN/GaNen_US
dc.subjectLEDen_US
dc.titleEfficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2013.2297413en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume50en_US
dc.citation.issue3en_US
dc.citation.spage129en_US
dc.citation.epage132en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000483844200001en_US
dc.citation.woscount2en_US
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