完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSolomon, Joel M.en_US
dc.contributor.authorYao, Hsin-Yuen_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHer, Tsing-Huaen_US
dc.date.accessioned2019-10-05T00:09:43Z-
dc.date.available2019-10-05T00:09:43Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-943580-57-6en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/152912-
dc.description.abstractSingle-shot femtosecond laser ablation of monolayer molybdenum disulfide is demonstrated. An ablation threshold was found 0.9 nJ/mu m(2), which is too low for two-photon photoionization alone. We show that surface defects and avalanche ionization are important. (C) 2019 The Author(s)en_US
dc.language.isoen_USen_US
dc.titleFemtosecond-laser ablation of monolayer molybdenum disulfide (MoS2) on sapphireen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000482226300306en_US
dc.citation.woscount0en_US
顯示於類別:會議論文