完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Solomon, Joel M. | en_US |
dc.contributor.author | Yao, Hsin-Yu | en_US |
dc.contributor.author | Lu, Li-Syuan | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Her, Tsing-Hua | en_US |
dc.date.accessioned | 2019-10-05T00:09:43Z | - |
dc.date.available | 2019-10-05T00:09:43Z | - |
dc.date.issued | 2019-01-01 | en_US |
dc.identifier.isbn | 978-1-943580-57-6 | en_US |
dc.identifier.issn | 2160-9020 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152912 | - |
dc.description.abstract | Single-shot femtosecond laser ablation of monolayer molybdenum disulfide is demonstrated. An ablation threshold was found 0.9 nJ/mu m(2), which is too low for two-photon photoionization alone. We show that surface defects and avalanche ionization are important. (C) 2019 The Author(s) | en_US |
dc.language.iso | en_US | en_US |
dc.title | Femtosecond-laser ablation of monolayer molybdenum disulfide (MoS2) on sapphire | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000482226300306 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |