標題: Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates
作者: Liu, Che-yu
Choi, Wonsik
Huang, Hsien-chih
Kim, Jeongdong
Jung, Kyooho
Zhou, Weidong
Kuo, Hao-chung
Li, Xiuling
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-一月-2019
摘要: n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively. (c) 2019 The Author(s)
URI: http://hdl.handle.net/11536/152920
ISBN: 978-1-943580-57-6
ISSN: 2160-9020
期刊: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
起始頁: 0
結束頁: 0
顯示於類別:會議論文