標題: | Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode |
作者: | Jung, Kyooho Liu, Che-Yu Kim, J. D. Choi, Wonsik Zhou, Weidong Kuo, Hao-Chung Li, Xiuling 光電工程學系 Department of Photonics |
公開日期: | 1-一月-2016 |
摘要: | Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. |
URI: | http://hdl.handle.net/11536/146742 |
ISSN: | 2374-0140 |
期刊: | 2016 IEEE PHOTONICS CONFERENCE (IPC) |
起始頁: | 657 |
結束頁: | 658 |
顯示於類別: | 會議論文 |