標題: Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode
作者: Jung, Kyooho
Liu, Che-Yu
Kim, J. D.
Choi, Wonsik
Zhou, Weidong
Kuo, Hao-Chung
Li, Xiuling
光電工程學系
Department of Photonics
公開日期: 1-Jan-2016
摘要: Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.
URI: http://hdl.handle.net/11536/146742
ISSN: 2374-0140
期刊: 2016 IEEE PHOTONICS CONFERENCE (IPC)
起始頁: 657
結束頁: 658
Appears in Collections:Conferences Paper