標題: Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments
作者: Lee, You-Ting
Chen, Hsuan-Han
Tung, Yi-Chun
Shih, Bing-Yang
Hsiung, Szu-Yen
Lee, Tsung-Ming
Hsu, Chih-Chieh
Liu, Chien
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Lan, Yu-Pin
Cheng, Chun-Hu
交大名義發表
電子物理學系
電子工程學系及電子研究所
National Chiao Tung University
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: nonvolatile memory;ferroelectric polarization;remote plasma;HfZrO
公開日期: 1-Jan-2019
摘要: In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.
URI: http://hdl.handle.net/11536/152948
ISBN: 978-1-7281-0286-3
期刊: 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper