Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer

Title:	Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer
Authors:	Liu, Kuan-Wei Chen, Hsuan-Han Huang, Zhong-Ying Wang, Wei-Chun Fan, Yu-Chi Lin, Ching-Liang Hsu, Chih-Chieh Fan, Chia-Chi Hsu, Hsiao-Hsuan Chang, Chun-Yen Lin, Chien-Chung Cheng, Chun-Hu 交大名義發表電子物理學系電子工程學系及電子研究所 National Chiao Tung University Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
Keywords:	ferroelectricity;hafnium oxide;zirconium oxide;phase transition
Issue Date:	1-Jan-2019
Abstract:	In this paper, the ferroelectric polarization effect of ZrO2 capping layer on HfO2 NUM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO2 film can be induced by a thin ZrO2 capping layer. The thickness of ZrO2 capping layer plays an important role in the ferroelectric polarization of HfO2 MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO2/HfO2 film shows the advantage for suppressing the leakage issue during high-temperature ferroelectric phase transition.
URI:	http://hdl.handle.net/11536/152949
ISBN:	978-1-7281-0286-3
Journal:	2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
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Appears in Collections:	Conferences Paper