完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chung, Wan-Fang | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Lin, Chia-Sheng | en_US |
dc.contributor.author | Tu, Kuan-Jen | en_US |
dc.contributor.author | Li, Hung-Wei | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.contributor.author | Chen, Ying-Chung | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.date.accessioned | 2014-12-08T15:21:32Z | - |
dc.date.available | 2014-12-08T15:21:32Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15298 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.075203jes | en_US |
dc.description.abstract | This paper investigates anomalous capacitance-voltage (C-V) degradation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors (TFTs) under hot carrier stress. In vacuum hot carrier stress, both the gate-to-drain capacitance (C(GD)) and the gate-to-source capacitance (C(GS)) curves exhibited positive shifts due to electron trapping in the gate dielectric. In addition, an observed increase in capacitance value at a lower gate voltage in the C(GD) measurement only can be ascribed to interface state creation. However, when the hot carrier stress was performed in an oxygen-rich environment, the C(GD)-V(G) curve showed a significantly positive shift due to the electric-field-induced oxygen adsorption near the drain terminal. The degradation in the C(GS)-V(G) curve is due not only to the positive shift, but also the anomalous two step turn-on behavior. This phenomenon can be ascribed to the electron trapping in the gate dielectric and electric-field-induced oxygen adsorption on the channel layer, especially in the area adjacent to the drain terminal. The electron trapping increased the source energy barrier, with the electric-field-induced oxygen adsorption further raising the energy-band near the drain, resulting in a two-step turn-on behavior in the C(GS)-V(G) curve. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.075203jes] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.075203jes | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 159 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | H286 | en_US |
dc.citation.epage | H289 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000299292100074 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |