統計資料
總造訪次數
| 檢視 | |
|---|---|
| Fabricating GaN-based LEDs on (-201) beta-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition | 4 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Fabricating GaN-based LEDs on (-201) beta-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition | 0 | 0 | 0 | 1 | 1 | 0 | 0 |
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 加拿大 | 1 |
| 中國 | 1 |
| 日本 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Ottawa | 1 |
| Shanghai | 1 |