完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYang, Jinghuanen_US
dc.contributor.authorSun, Quanen_US
dc.contributor.authorLiu, Weien_US
dc.contributor.authorZhang, Zhibinen_US
dc.contributor.authorHu, Xiaoyongen_US
dc.contributor.authorLiu, Kaihuien_US
dc.contributor.authorYang, Hongen_US
dc.contributor.authorMisawa, Hiroakien_US
dc.contributor.authorGong, Qihuangen_US
dc.date.accessioned2019-12-13T01:09:58Z-
dc.date.available2019-12-13T01:09:58Z-
dc.date.issued2019-10-01en_US
dc.identifier.issn2195-1071en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adom.201900580en_US
dc.identifier.urihttp://hdl.handle.net/11536/153044-
dc.description.abstractCarrier dynamics, the most fundamental process in electronics and optoelectronics, has drawn great attentions owing to its crucial role in property engineering of materials. Exploration and regulation of carrier dynamics are essential for designing devices with specific functions and optimizing their performances. However, the lack of conventional tools with simultaneous ultrafast temporal and ultrasmall spatial resolution has impeded direct observation and manipulation of carrier dynamics at both the femtosecond and nanometer scale. In this study, the direct observation and modulation of ultrafast carrier dynamics at the graphene/gallium arsenide (GaAs) interface is achieved by tuning the doping level of bulk GaAs. This successful characterization is performed using advanced in situ photoemission electron microscopy combined with the ultrafast pump-probe technique. It is found that a change in the doping level in GaAs can change its band bending and switch the hot-carrier transfer direction at the graphene/GaAs interface with a lifetime reduction of nearly six times. This work paves the way of engineering ultrafast carrier dynamics at 2D interfaces by modifying the 3D bulk properties, and also provides a platform for fundamental studies of ultrafast physics with high spatial resolution.en_US
dc.language.isoen_USen_US
dc.subjectgrapheneen_US
dc.subjectGaAs heterostructureen_US
dc.subjectphotoemission electron microscopyen_US
dc.subjectultrafast carrier transferen_US
dc.titleEngineering Ultrafast Carrier Dynamics at the Graphene/GaAs Interface by Bulk Doping Levelen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adom.201900580en_US
dc.identifier.journalADVANCED OPTICAL MATERIALSen_US
dc.citation.volume7en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000491110400025en_US
dc.citation.woscount0en_US
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