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dc.contributor.authorHuang, Fengen_US
dc.contributor.authorLi, Jing Zhouen_US
dc.contributor.authorXu, Zhu Huaen_US
dc.contributor.authorLiu, Yuanen_US
dc.contributor.authorLuo, Ri Pengen_US
dc.contributor.authorZhang, Si Weien_US
dc.contributor.authorNie, Peng Boen_US
dc.contributor.authorLv, Yan Feien_US
dc.contributor.authorZhao, Shi Xien_US
dc.contributor.authorSu, Wei Taoen_US
dc.contributor.authorLi, Wen Dien_US
dc.contributor.authorZhao, Shi Chaoen_US
dc.contributor.authorWei, Guo Danen_US
dc.contributor.authorKuo, Hao Chungen_US
dc.contributor.authorKang, Fei Yuen_US
dc.date.accessioned2019-12-13T01:10:03Z-
dc.date.available2019-12-13T01:10:03Z-
dc.date.issued2019-09-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/nano9091312en_US
dc.identifier.urihttp://hdl.handle.net/11536/153116-
dc.description.abstractTwo-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N,N '-bis-4-butylphenyl-N,N '-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 x 10(11) Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.en_US
dc.language.isoen_USen_US
dc.subject2D-WS2en_US
dc.subjectphotodetectoren_US
dc.subjectorganic semiconductoren_US
dc.subjectresponsivityen_US
dc.titleA Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/nano9091312en_US
dc.identifier.journalNANOMATERIALSen_US
dc.citation.volume9en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000489101900129en_US
dc.citation.woscount1en_US
Appears in Collections:Articles