LTPS Active Pixel Circuit With Threshold Voltage Compensation for X-Ray Imaging Applications

doi:10.1109/TED.2019.2933225

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.contributor.author	Lin, Chi-Hao	en_US
dc.contributor.author	Yeh, Shan	en_US
dc.contributor.author	Tu, Cheng-Che	en_US
dc.contributor.author	Karim, Karim S.	en_US
dc.date.accessioned	2019-12-13T01:12:18Z	-
dc.date.available	2019-12-13T01:12:18Z	-
dc.date.issued	2019-10-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2019.2933225	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153169	-
dc.description.abstract	In this article, we proposed a low-temperature poly-silicon (LTPS) active pixel sensor (APS) circuit with threshold voltage (V-th) compensation. LTPS thin-film transistors (TFTs) are known to degrade under long-term irradiation and this is quantified. Simulation results and experimental data confirm that the proposed APS circuit compensates the instability of LTPS TFTs and is a promising, high-performance alternative to current amorphous silicon (a-Si) pixel-based X-ray detectors.	en_US
dc.language.iso	en_US	en_US
dc.subject	Active pixel sensor (APS)	en_US
dc.subject	LTPS	en_US
dc.subject	thin-film transistor (TFT)	en_US
dc.subject	threshold voltage compensation	en_US
dc.subject	X-ray imager	en_US
dc.title	LTPS Active Pixel Circuit With Threshold Voltage Compensation for X-Ray Imaging Applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2019.2933225	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	66	en_US
dc.citation.issue	10	en_US
dc.citation.spage	4216	en_US
dc.citation.epage	4220	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000487477600016	en_US
dc.citation.woscount	0	en_US
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