標題: Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes
作者: Xu, Rong-Bin
Xu, Huan
Mei, Yang
Shi, Xiao-Ling
Ying, Lei-Ying
Zheng, Zhi-Wei
Long, Hao
Qiu, Zhi-Ren
Zhang, Bao-Ping
Liu, Jian-Ping
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-十二月-2019
摘要: We fabricated GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) by inserting InGaN quantum well (QW) active region between two dielectric distributed Bragg reflectors (DBRs). Due to the different gain enhancement factors in a single device, multi-longitudinal modes were observed and tuned with changing the injection current density: pure-blue (PB) at low current density, violet-blue (VB) at intermediate current density, and PB again at high current density. The variation of emission spectra is explained by the competition between band-filling effect and self-heating effect.
URI: http://dx.doi.org/10.1016/j.jlumin.2019.116717
http://hdl.handle.net/11536/153205
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2019.116717
期刊: JOURNAL OF LUMINESCENCE
Volume: 216
起始頁: 0
結束頁: 0
顯示於類別:期刊論文