標題: | Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes |
作者: | Tu, Hong-Yi Tsao, Yu-Ching Tai, Mao-Chou Chang, Ting-Chang Tsai, Yu-Lin Huang, Shin-Ping Zheng, Yu-Zhe Wang, Yu-Xuan Chen, Hong-Chih Tsai, Tsung-Ming Wu, Chia-Chuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Negative bias temperature instability;Thermal variables control;Stress;Grain boundaries;Grain size;Degradation;Thin film transistors;LTPS thin-film transistor;negative bias temperature instability;grain size;excimer laser annealing |
公開日期: | 1-十一月-2019 |
摘要: | This letter investigates degradation after negative bias temperature instability (NBTI) stress applied to LTPS TFTs with different polycrystalline-silicon grain sizes. The initial characteristics of the LTPS TFTs are similar regardless of grain size; however, we observed a different degree of degradation after NBTI depending on grain size. In general, after NBTI, both grain boundary traps and interface traps were generated. We found that the degree of NBTI degradation is dominated by the concentration of grain boundary traps, which themselves are a result of the different grain sizes that occur due to excimer laser annealing energy. At initial, dangling bonds in the grain boundaries and at the interface are passivated by hydrogen atoms, hence the initial characteristics are similar. Since the large grain of poly-Si initially generates more dangling bonds in the grain boundaries, after NBTI, hydrogen depassivation generates more grain boundary traps and causes much more serious degradation in device performance. |
URI: | http://dx.doi.org/10.1109/LED.2019.2942102 http://hdl.handle.net/11536/153253 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2019.2942102 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 40 |
Issue: | 11 |
起始頁: | 1768 |
結束頁: | 1771 |
顯示於類別: | 期刊論文 |