Copper direct bonding with short time and excellent electrical property by < 111 >-oriented nano-twinned copper

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DC Field	Value	Language
dc.contributor.author	Shie, Kai Cheng	en_US
dc.contributor.author	Juang, Jing-Ye	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2019-12-13T01:12:49Z	-
dc.date.available	2019-12-13T01:12:49Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-4-904743-07-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153259	-
dc.description.abstract	In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8 '' wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.	en_US
dc.language.iso	en_US	en_US
dc.title	Copper direct bonding with short time and excellent electrical property by < 111 >-oriented nano-twinned copper	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)	en_US
dc.citation.spage	50	en_US
dc.citation.epage	50	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000492018300050	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper