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dc.contributor.authordel Rio, Daviden_US
dc.contributor.authorYoon, Daekeunen_US
dc.contributor.authorChen, Fan-Taen_US
dc.contributor.authorZhang, Yanen_US
dc.contributor.authorLiang, Chia-Jenen_US
dc.contributor.authorChiang, Ching-Wenen_US
dc.contributor.authorChang, Mau-Chung Franken_US
dc.contributor.authorKuan, Yen-Chengen_US
dc.date.accessioned2019-12-13T01:12:53Z-
dc.date.available2019-12-13T01:12:53Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-1309-8en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/153307-
dc.description.abstractThis paper presents the design of a novel tri-band 28-nm CMOS transmitter for the 28, 38 and 60-GHz mm-wave bands. It consists of a 4-stage power amplifier preceded by a wideband active mixer. The PA employs wideband enhancing techniques and low-loss switches to achieve the tri-band operation, as well as a linearization loop to enhance the OP1dB by more than 3.5 dB. The PA exhibits a measured gain of 22/23/12 dB in the 3 bands and a Psat higher than 10 dBm. The transmitter CG is 10/15/4 dB and it is capable of transmitting a 1.5-Gbps modulated signal. The PA and the transmitter consume 430 and 431 mW of DC power and occupy 0.87 and 1.14 mm(2), respectively.en_US
dc.language.isoen_USen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectmillimeter wave integrated circuitsen_US
dc.subjectmixersen_US
dc.subjectpower amplifiersen_US
dc.subject5Gen_US
dc.titleMulti-Gbps Tri-Band 28/38/60-GHz CMOS Transmitter for Millimeter-Wave Radio System-on-Chipen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)en_US
dc.citation.spage488en_US
dc.citation.epage491en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000494461700126en_US
dc.citation.woscount0en_US
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