標題: | The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs |
作者: | Guo, Jyh-Chyurn Ou, Jyun-Rong Lin, Jinq-Min 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | High frequency;f(T);f(MAX);intrinsic parasitic RLC;multi-finger;MOSFET;layout dependent effects |
公開日期: | 1-一月-2019 |
摘要: | A new observation of significant differences in the high frequency device parameters and performance like f(T) and f(MAX) is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characterization on the intrinsic Z- and Y-parameters, it is found that the major impact comes from the particular increase of intrinsic parasitic resistances and inductances at the source terminal, namely R-s,R-int and L-s,L-int in the 4T MF MOSFETs. The proposed analytical models as a function of key device parameters incorporating the influence of the intrinsic parasitic RLC through high frequencies can accurately predict f(T) and f(MAX) degradation in 4T MF nMOSFETs as well as the complicated layout dependent effects. The experimental results and analytical models can be useful to facilitate MF devices layout optimization for high frequency design and performance improvement. |
URI: | http://hdl.handle.net/11536/153310 |
ISBN: | 978-1-7281-1309-8 |
ISSN: | 0149-645X |
期刊: | 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) |
起始頁: | 963 |
結束頁: | 966 |
顯示於類別: | 會議論文 |