標題: The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs
作者: Guo, Jyh-Chyurn
Ou, Jyun-Rong
Lin, Jinq-Min
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High frequency;f(T);f(MAX);intrinsic parasitic RLC;multi-finger;MOSFET;layout dependent effects
公開日期: 1-一月-2019
摘要: A new observation of significant differences in the high frequency device parameters and performance like f(T) and f(MAX) is identified from the comparison of 3-terminal (3T) and 4-terminal (4T) multi-finger (MF) nMOSFETs. Through an extensive characterization on the intrinsic Z- and Y-parameters, it is found that the major impact comes from the particular increase of intrinsic parasitic resistances and inductances at the source terminal, namely R-s,R-int and L-s,L-int in the 4T MF MOSFETs. The proposed analytical models as a function of key device parameters incorporating the influence of the intrinsic parasitic RLC through high frequencies can accurately predict f(T) and f(MAX) degradation in 4T MF nMOSFETs as well as the complicated layout dependent effects. The experimental results and analytical models can be useful to facilitate MF devices layout optimization for high frequency design and performance improvement.
URI: http://hdl.handle.net/11536/153310
ISBN: 978-1-7281-1309-8
ISSN: 0149-645X
期刊: 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
起始頁: 963
結束頁: 966
顯示於類別:會議論文