標題: New Observation and Analysis of Layout Dependent Effects in Sub-40nm Multi-Ring and Multi-Finger nMOSFETs for High Frequency Applications
作者: Li, Zu-Cheng
Guo, Jyh-Chyurn
Lin, Jinq-Min
交大名義發表
National Chiao Tung University
公開日期: 1-一月-2019
摘要: Multi-finger (MF) and multi-ring (MR) nMOSFETs were designed and fabricated in 40nm CMOS technology to explore the layout dependent effects in key device parameters and parasitic RC responsible for RF performance. For the first time, the experimental proves the advantages of MR nMOSFETs, such as the increase of effective mobility (mu(eff)), transconductance (g(m)), and channel current (I-DS), and smaller parasitic source resistance (R-S), all of which are in favor of higher speed and higher frequency. However, the undesired increase of 3-D fringing capacitances may bring a critical trade-off influencing high frequency performance. In this paper, new observation and in-depth analysis of the complicated layout dependent effects can facilitate the device layout optimization in the right direction for RF and mm-wave design and applications.
URI: http://hdl.handle.net/11536/153664
ISBN: 978-1-7281-0942-8
ISSN: 1930-8868
期刊: 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁: 0
結束頁: 0
顯示於類別:會議論文