標題: Copper-to-copper direct bonding using different (111) surface ratios of nanotwinned copper films
作者: Huang, J. W.
Shie, K. C.
Liu, H. C.
Li, Y. J.
Cheng, H. Y.
Chen, C.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nanotwinned copper;(111)-surface ratio;copper-to-copper direct bonding
公開日期: 1-一月-2019
摘要: Copper-to-copper direct bonding emerges to be the most important technique for fine pitch packaging in microelectronic devices. Low temperature Cu-to-Cu direct bonding by using highly (111)-oriented nanotwinned Cu (nt-Cu) has been achieved because Cu (111) surface has higher surface diffusiyities. To investigate the bonding effect by using different surface ratio nt-Cu, electroplating under different conditions was performed. The results indicate that bonding with higher (111)-surface ratio copper films would obtain a higher bonding strength of 15% w hen bonding at 300 degrees C.
URI: http://hdl.handle.net/11536/153311
ISBN: 978-4-9902-1887-4
期刊: 2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019)
起始頁: 52
結束頁: 55
顯示於類別:會議論文