完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJuang, Jing Yeen_US
dc.contributor.authorShie, Kai Chengen_US
dc.contributor.authorLi, Yu Jinen_US
dc.contributor.authorTu, K. N.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-12-13T01:12:53Z-
dc.date.available2019-12-13T01:12:53Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-4-9902-1887-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/153318-
dc.description.abstractIn this study, we present a chip-to-chip copper direct bonding technique in N-2 ambient, without vacuum by using (111) oriented nano-twinned copper. A well bonded copper joint was identified by the cross-sectioning process and microstructure observation. The cross-sectional images showed a void-less bonding interface in the bonded copper joint. In addition, we conducted resistance measurement using Kelvin probes on the bonded chip-to-chip test vehicle. The resistance for a daisy chain loop (400 joints) and the Kelvin structure (single joint) are 5.28 Omega and 4.14 m Omega, respectively. The contact resistivity is 3.98 x 10(-8) Omega.cm(2). More than 30% resistance reduction in the single Cu joint has been confirmed as compared to the SnAg solder joint (6.32 m Omega). Besides, temperature cycling test shows that the daisy chain loop with 400 Cu joints can stand the 1,000 cycles without failure. In summary, the chip-to-chip copper direct bonding in no-vacuum ambient has been successfully achieved by using (111) oriented nt-Cu. The low resistance as well as a reliable Cu-to-Cu joint can be achieved.en_US
dc.language.isoen_USen_US
dc.subjectCu-to-Cu direct bondingen_US
dc.subjectnanotwinned Cuen_US
dc.subjectgrain growthen_US
dc.subjectCu joint resistanceen_US
dc.subjecttemperature cycling testen_US
dc.titleLow resistance and high reliable Cu-to-Cu joints using highly (111)-oriented nano-twinned copperen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019)en_US
dc.citation.spage212en_US
dc.citation.epage215en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000491362200047en_US
dc.citation.woscount0en_US
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