完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Yu-Jin | en_US |
dc.contributor.author | Hsu, Wei-Yu | en_US |
dc.contributor.author | Lin, Benson | en_US |
dc.contributor.author | Chang, ChiaCheng | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2019-12-13T01:12:54Z | - |
dc.date.available | 2019-12-13T01:12:54Z | - |
dc.date.issued | 2019-01-01 | en_US |
dc.identifier.isbn | 978-4-9902-1887-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153319 | - |
dc.description.abstract | In the present paper, the nt-Cu were electroplated on the InFO test vehicles with 5 mu m line width to compare the reliability with the normal electroplated copper. The temperature of the TCT ranges from -55 to 125 degrees C. The microstructure of the copper traces after 200 cycles and 1000 cycles was shown in the results. The nt-Cu RDL is much stronger than the normal Cu in the thermal cycling test. In order to understand the mechanical property of the nt-Cu and the normal Cu, tensile tests of electroplated copper foils was employed. After annealing at 250 degrees C for 3 hours, the toughness of nt-Cu (about 60MJ/m(3)) is much higher than normal copper (about 30MJ/m(3)). In addition, the simulation results shows that the maximum stress on the copper trace during the TCT is about 200MPa which is much lower than the yield point of nt-Cu. In other word, the nt-Cu would return to original size when the stress removed without strain accumulation. In summary, we observed that the nt-Cu performs much better than normal copper in TCT. From the tensile test and simulation, we can understand the mechanical behavior and the typical reason for the high reliability of nt-Cu. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nano-twinned | en_US |
dc.subject | fan-out | en_US |
dc.subject | TCT | en_US |
dc.subject | reliability | en_US |
dc.title | High-toughness (111) nano-twinned copper lines for fan-out wafer-level packaging | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019) | en_US |
dc.citation.spage | 251 | en_US |
dc.citation.epage | 254 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000491362200056 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |