完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLi, Yu-Jinen_US
dc.contributor.authorHsu, Wei-Yuen_US
dc.contributor.authorLin, Bensonen_US
dc.contributor.authorChang, ChiaChengen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-12-13T01:12:54Z-
dc.date.available2019-12-13T01:12:54Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-4-9902-1887-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/153319-
dc.description.abstractIn the present paper, the nt-Cu were electroplated on the InFO test vehicles with 5 mu m line width to compare the reliability with the normal electroplated copper. The temperature of the TCT ranges from -55 to 125 degrees C. The microstructure of the copper traces after 200 cycles and 1000 cycles was shown in the results. The nt-Cu RDL is much stronger than the normal Cu in the thermal cycling test. In order to understand the mechanical property of the nt-Cu and the normal Cu, tensile tests of electroplated copper foils was employed. After annealing at 250 degrees C for 3 hours, the toughness of nt-Cu (about 60MJ/m(3)) is much higher than normal copper (about 30MJ/m(3)). In addition, the simulation results shows that the maximum stress on the copper trace during the TCT is about 200MPa which is much lower than the yield point of nt-Cu. In other word, the nt-Cu would return to original size when the stress removed without strain accumulation. In summary, we observed that the nt-Cu performs much better than normal copper in TCT. From the tensile test and simulation, we can understand the mechanical behavior and the typical reason for the high reliability of nt-Cu.en_US
dc.language.isoen_USen_US
dc.subjectnano-twinneden_US
dc.subjectfan-outen_US
dc.subjectTCTen_US
dc.subjectreliabilityen_US
dc.titleHigh-toughness (111) nano-twinned copper lines for fan-out wafer-level packagingen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019)en_US
dc.citation.spage251en_US
dc.citation.epage254en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000491362200056en_US
dc.citation.woscount0en_US
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