Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor

Abstract

Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.