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dc.contributor.authorHorng, Jasonen_US
dc.contributor.authorChou, Yu-Hsunen_US
dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorHsu, Chu-Yuanen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorDeng, Huien_US
dc.date.accessioned2020-01-02T00:04:21Z-
dc.date.available2020-01-02T00:04:21Z-
dc.date.issued2019-11-20en_US
dc.identifier.issn2334-2536en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OPTICA.6.001443en_US
dc.identifier.urihttp://hdl.handle.net/11536/153393-
dc.description.abstractThe resonance energy and the transition rate of atoms, molecules, and solids were understood as their intrinsic properties in classical electromagnetism. It was later realized that these quantities are linked to the radiative coupling between the transition dipole and photon modes. Such effects can be greatly amplified in macroscopic many-body systems from virtual photon exchange between dipoles, but are often masked by inhomogeneity and pure dephasing, especially in solids. Here, we observe in both absorption and emission spectroscopy the renormalization of the exciton resonance and the radiative decay rate in transition metal dichalcogenides monolayers due to their radiative interactions. Tuning the photon mode density near the monolayer, we demonstrate control of cooperative Lamb shift, radiative decay, and valley polarization of the excitons as well as control of the charged exciton emission. Our work establishes a technologically accessible and robust experimental system for engineering cooperative matter-light interactions. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleEngineering radiative coupling of excitons in 2D semiconductorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OPTICA.6.001443en_US
dc.identifier.journalOPTICAen_US
dc.citation.volume6en_US
dc.citation.issue11en_US
dc.citation.spage1443en_US
dc.citation.epage1448en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000498042400014en_US
dc.citation.woscount0en_US
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