標題: | Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer |
作者: | Ou, Po-Chi Liu, Wei-Rein Ton, Ho-Jei Lin, Ja-Hon Hsieh, Wen-Feng 光電工程學系 Department of Photonics |
公開日期: | 1-一月-2011 |
摘要: | We observed ultrafast free exciton thermalization time of 700-900 fs and obtained the magnitude of maximal differential absorption to be 1.8 x 10(4) cm(-1) with the pumping fluence of 10 mu J/cm(2) by measuring transient differential transmission in a thin ZnO epitaxial layer at room temperature. The largest induced transparency occurs near exciton resonance associated with absorption saturation by comparing the excitation from the above band-gap to band-tail states. The pumping dependent transient absorption reveals transition of excitonic relaxation from exciton-phonon scattering to exciton-exciton scattering or to an electron-hole plasma. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525993] |
URI: | http://dx.doi.org/10.1063/1.3525993 http://hdl.handle.net/11536/26090 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.3525993 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 109 |
Issue: | 1 |
結束頁: | |
顯示於類別: | 期刊論文 |