標題: Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer
作者: Ou, Po-Chi
Liu, Wei-Rein
Ton, Ho-Jei
Lin, Ja-Hon
Hsieh, Wen-Feng
光電工程學系
Department of Photonics
公開日期: 1-一月-2011
摘要: We observed ultrafast free exciton thermalization time of 700-900 fs and obtained the magnitude of maximal differential absorption to be 1.8 x 10(4) cm(-1) with the pumping fluence of 10 mu J/cm(2) by measuring transient differential transmission in a thin ZnO epitaxial layer at room temperature. The largest induced transparency occurs near exciton resonance associated with absorption saturation by comparing the excitation from the above band-gap to band-tail states. The pumping dependent transient absorption reveals transition of excitonic relaxation from exciton-phonon scattering to exciton-exciton scattering or to an electron-hole plasma. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525993]
URI: http://dx.doi.org/10.1063/1.3525993
http://hdl.handle.net/11536/26090
ISSN: 0021-8979
DOI: 10.1063/1.3525993
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 109
Issue: 1
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000286219300003.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。