標題: Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient
作者: Chen, Lih-Ren
Huang, Shen-Che
Chiu, Jo-Lun
Lu, Chien-Cheng
Su, Wei-Ming
Weng, Chen-Yuan
Shen, Huan-Yu
Lu, Tien-Chang
Chen, Hsiang
光電工程學系
Department of Photonics
關鍵字: Failure mechanisms;Reliability;Near-UV LEDs;Bias stress
公開日期: 15-Oct-2019
摘要: Degradation mechanisms of nitride-based near-ultraviolet (near-UV) light-emitting diodes (LEDs) were systematically analyzed by applying forward- and reverse-bias stresses to them in a salt water vapor ambient. The surface temperature of the forward-bias stress sample was higher than that of the reverse-bias stress sample. The high temperature of the forward-bias stress sample accelerated the chemical reaction of the device structure with salt water vapors and led to faster degradation. Composition analyses of the sample surface and cross-section were conducted to investigate the failure mechanism. The analyses results indicated that the erosion of the indium-tin-oxide layer enhanced the diffusion of the conducting metal into the LED crystal. The proposed method can effectively characterize the quality of near-UV LEDs in a short duration.
URI: http://dx.doi.org/10.1016/j.mee.2019.111158
http://hdl.handle.net/11536/153417
ISSN: 0167-9317
DOI: 10.1016/j.mee.2019.111158
期刊: MICROELECTRONIC ENGINEERING
Volume: 218
起始頁: 0
結束頁: 0
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