Full metadata record
DC FieldValueLanguage
dc.contributor.authorWang, I-Juen_US
dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorTu-Ngoc Lamen_US
dc.contributor.authorHuang, E-Wenen_US
dc.contributor.authorTu, K. N.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2020-01-02T00:04:23Z-
dc.date.available2020-01-02T00:04:23Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-019-07742-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/153420-
dc.description.abstractWe have examined the effect of different bath temperatures on residual stress of both the random-oriented Cu films and the highly (111)-oriented nanotwinned Cu films by synchrotron radiation x-ray measurements. The bath temperature varied from 15 degrees C to 40 degrees C. The results indicate that the average residual stress in the highly (111)-oriented nanotwinned films is higher than that in the randomly oriented Cu films. However, the stress in the highly (111)-oriented Cu decreases with increasing bath temperature. The average residual stress can be reduced from 253 MPa electroplated at 15 degrees C to 95 MPa under a bath temperature of 35 degrees C. We could successfully tune and measure residual stress of the Cu thin films. The films with low residual stress prevent warpage from occurring on the substrate and lower the processing failure in copper direct bonding and other processes that need alignment.en_US
dc.language.isoen_USen_US
dc.subjectResidual stressen_US
dc.subjectnanotwinned Cuen_US
dc.subjectelectroplatingen_US
dc.subjectsynchrotron x-ray diffractionen_US
dc.titleTuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-019-07742-1en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000495945800003en_US
dc.citation.woscount0en_US
Appears in Collections:Articles