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dc.contributor.authorSinha, ShreeKanten_US
dc.contributor.authorFeng, Hsiang-Anen_US
dc.contributor.authorChung, Cheng-Yuen_US
dc.contributor.authorTu, Chia-Weien_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2020-01-02T00:04:24Z-
dc.date.available2020-01-02T00:04:24Z-
dc.date.issued2019-11-25en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0342001JSSen_US
dc.identifier.urihttp://hdl.handle.net/11536/153433-
dc.description.abstractN-side up thin-AlGaInP epilayers based on vertical light-emitting diodes (VLEDs) (light emitting area: 44 mil x 44 mil) with Si and composite metal (copper/Invar/copper; CIC) substrates were obtained by wafer bonding and epilayer transferring technologies. The coefficients of thermal expansion of the Si and CIC substrates were about 2.6 x 10(-6) /K and 6.1 x 10(-6) /K respectively. The coefficient of thermal expansion of CIC was matched to the GaAs substrate and AlGaInP epilayer. After the epilayer transferred to the CIC substrate, a small amount of bending occurred. The performance of the packaged LEDs/CIC was almost the same with that of LEDs/Si. The redshift phenomenon was from 623 to 643 nm for the CIC/LEDs while that of the LEDs/Si chip was from 625 to 643 nm with an injected current from 100 mA to 1 A and high output power (251 mW at 1 A) as compared to packaged LEDs/Si (299.5 mW at 1 A). The variation in light-emitting wavelengths of the LEDs/CIC was the same with that of the LEDs/Si. The distribution of the temperature of the LEDs on the CIC substrate was less than the LEDs on Si throughout the surface. The obtained data suggested that CIC could be extended instead of a Si substrate for high-power thin film LEDs applications. (c) The Author(s) 2019. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.en_US
dc.language.isoen_USen_US
dc.titleComparison of Properties of Thin Film AlGaInP LEDs with Composite Metal and Si Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0342001JSSen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000499648500001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles