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dc.contributor.authorDai, Chih-Haoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorKuo, Yuan-Juien_US
dc.contributor.authorHung, Ya-Chien_US
dc.contributor.authorLo, Wen-Hungen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorShih, Jou-Miaoen_US
dc.contributor.authorChung, Wan-Linen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorDai, Bai-Shanen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorXia, Guangruien_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng Tungen_US
dc.date.accessioned2014-12-08T15:21:35Z-
dc.date.available2014-12-08T15:21:35Z-
dc.date.issued2011-12-30en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.07.027en_US
dc.identifier.urihttp://hdl.handle.net/11536/15348-
dc.description.abstractThis letter investigates the reliability issues of HfO(2)/Ti(1-x)N(x) metal-oxide-semiconductor field effect transistor in terms of static and dynamic stress. The results indicate threshold voltage (V(th)) instability under dynamic stress is more serious than that under static stress, owning to transient charge trapping within high-k dielectric. Capacitance-voltage techniques verified that electron trapping under dynamic stress was located in high-k dielectric near the source/drain (S/D) overlap region, rather than the overall dielectric. Furthermore, the V(th) shift clearly increases with an increase in dynamic stress operation frequency. This phenomenon can be attributed to the fact that electrons injecting to the S/D overlap region have insufficient time to de-trap from high-k dielectric. We further investigated the impact of different Ti(1-x)N(x) composition of metal-gate electrode on charge trapping characteristics, and observed that V(th) shift decreases significantly with an increase in the ratio of nitride. This is because the nitride atoms diffusing from the metal gate fill up oxygen vacancies and reduce the concentration of traps in high-k dielectric. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHigh-k gate dielectricen_US
dc.subjectTiN metal gateen_US
dc.subjectElectron trappingen_US
dc.subjectThreshold voltage instabilityen_US
dc.titleCharge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacksen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2011.07.027en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue5en_US
dc.citation.spage1511en_US
dc.citation.epage1515en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000299233000029-
dc.citation.woscount9-
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