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dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorHung, Ya-Chien_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:21:35Z-
dc.date.available2014-12-08T15:21:35Z-
dc.date.issued2011-12-30en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.08.104en_US
dc.identifier.urihttp://hdl.handle.net/11536/15349-
dc.description.abstractIn this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectIndium Gallium Zinc Oxide (IGZO)en_US
dc.subjectThin film transistors (TFTs)en_US
dc.subjectPassivation layeren_US
dc.titleParaffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2011.08.104en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue5en_US
dc.citation.spage1608en_US
dc.citation.epage1611en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000299233000045-
dc.citation.woscount5-
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