Title: N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors
Authors: Chang, Geng-Wei
Chang, Ting-Chang
Jhu, Jhe-Ciou
Tsai, Tsung-Ming
Syu, Yong-En
Chang, Kuan-Chang
Jian, Fu-Yen
Hung, Ya-Chi
Tai, Ya-Hsiang
光電工程學系
Department of Photonics
Keywords: Indium gallium zinc oxide (IGZO);Thin film transistors (TFTs);N2O plasma treatment
Issue Date: 1-Sep-2013
Abstract: N2O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properties at high temperature. The abnormal electrical properties are explained by the energy band diagrams for both forward and reverse sweep. Above 400 K, holes can be generated from trap-assisted transition, and drift to the source side which induces source barrier lowering. The source side barrier lowering enhances electron injection from the source to channel and causes an apparent sub-threshold leakage current. This phenomenon, which is experimentally verified, only appears in the device without N2O plasma treatment, but not in the device with N2O plasma treatment. The results suggested that the density of states for a-IGZO with N2O plasma treatment is much lower than that without plasma treatment. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.04.086
http://hdl.handle.net/11536/23327
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.04.086
Journal: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
Begin Page: 281
End Page: 284
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