完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Su, Po-Cheng | en_US |
dc.contributor.author | Jiang, Cheng-Min | en_US |
dc.contributor.author | Chen, Yu-Jia | en_US |
dc.contributor.author | Wang, Chih-Chieh | en_US |
dc.contributor.author | Li, Kai-Shin | en_US |
dc.contributor.author | Lin, Chao-Cheng | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.date.accessioned | 2020-02-02T23:54:29Z | - |
dc.date.available | 2020-02-02T23:54:29Z | - |
dc.date.issued | 2020-01-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2019.2953781 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153509 | - |
dc.description.abstract | A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Analytical modeling | en_US |
dc.subject | conductance change | en_US |
dc.subject | read | en_US |
dc.subject | resistive switching memory | en_US |
dc.title | Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2019.2953781 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 67 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 113 | en_US |
dc.citation.epage | 117 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000506578900017 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |