標題: | Mechanism and characterizations studies of resistive switching effects on a thin FeO(x)-transition layer of the Ti/TiN/SiO(2)/FeO(x)/FePt structure by thermal annealing treatments |
作者: | Chang, Yao-Feng Feng, Li-Wei Chang, Ting-Chang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 15-十二月-2011 |
摘要: | We investigated annealing effects on the bipolar resistive switching characteristics and mechanism of the thin FeO(x) transition layer in a Ti/TiN/SiO(2)/FeO(x)/FePt structure by depositing a plasma-enhanced tetraethyl orthosilicate oxide onto the Fe-contented electrode. The electrical results show that the values of operation voltage, variation of electrical parameters and retention properties could be improved with the increasing thermal treatment budget. Tunneling electron microscope, X-ray diffraction, Auger electron spectroscopy and X-ray photon-emission spectra depth profiles were examined for cross-section image, crystallinity and composition analyses of the transition layer. In order to investigate the resistive switching mechanism and characterizations in Ti/TiN/SiO(2)/FeO(x)/FePt structure, the electrical parameters were extracted during set and reset process. The retention property at room temperature and 85 C was improved after the thermal treatment and maintains both resistance states over 6 x 10(4) s implies promising potential for future memory application. (C) 2011 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.matchemphys.2011.09.037 http://hdl.handle.net/11536/15357 |
ISSN: | 0254-0584 |
DOI: | 10.1016/j.matchemphys.2011.09.037 |
期刊: | MATERIALS CHEMISTRY AND PHYSICS |
Volume: | 131 |
Issue: | 1-2 |
起始頁: | 262 |
結束頁: | 267 |
顯示於類別: | 期刊論文 |