標題: Atomic and Electronic Structures of a-SiNx:H
作者: Gritsenko, V. A.
Kruchinin, V. N.
Prosvirin, I. P.
Novikov, Yu N.
Chin, A.
Volodin, V. A.
交大名義發表
National Chiao Tung University
公開日期: 1-十一月-2019
摘要: The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.
URI: http://dx.doi.org/10.1134/S1063776119080132
http://hdl.handle.net/11536/153633
ISSN: 1063-7761
DOI: 10.1134/S1063776119080132
期刊: JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
Volume: 129
Issue: 5
起始頁: 924
結束頁: 934
顯示於類別:期刊論文