Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, Wei-Ting | en_US |
dc.contributor.author | Lin, Bo-Han | en_US |
dc.contributor.author | Lu, Li-Syuan | en_US |
dc.contributor.author | Lee, Ming-Hao | en_US |
dc.contributor.author | Chu, Ming-Wen | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.contributor.author | Yao, Wang | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Shih, Chih-Kang | en_US |
dc.date.accessioned | 2020-02-02T23:54:42Z | - |
dc.date.available | 2020-02-02T23:54:42Z | - |
dc.date.issued | 2019-12-01 | en_US |
dc.identifier.issn | 2375-2548 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1126/sciadv.aax7407 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153650 | - |
dc.description.abstract | Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species-dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1126/sciadv.aax7407 | en_US |
dc.identifier.journal | SCIENCE ADVANCES | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000505069600049 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |