High Electromigration Lifetimes of Nanotwinned Cu Redistribution Lines

doi:10.1109/ECTC.2019.00206

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tseng, I-Hsin	en_US
dc.contributor.author	Li, Yu-Jin	en_US
dc.contributor.author	Lin, Benson	en_US
dc.contributor.author	Chang, Chia-Cheng	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2020-02-02T23:55:32Z	-
dc.date.available	2020-02-02T23:55:32Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-1498-9	en_US
dc.identifier.issn	0569-5503	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/ECTC.2019.00206	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153660	-
dc.description.abstract	In this paper, we measured the electromigration lifetimes for nanotwinned copper (nt-Cu) and regular copper redistribution lines (RDLs) for 3D-ICs packaging. The width of the RDLs is 10 mu m in width and 5 mu m in thickness, and the lines were coated by polyimide. The average lifetime of the nt-Cu RDL copper line is 445 hours to reach 1.2 times of its initial resistance. However, it takes 160 hours to reach the same resistance increase for regular copper RDL line. The nt-Cu has better EM lifetime than regular copper.	en_US
dc.language.iso	en_US	en_US
dc.title	High Electromigration Lifetimes of Nanotwinned Cu Redistribution Lines	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ECTC.2019.00206	en_US
dc.identifier.journal	2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)	en_US
dc.citation.spage	1328	en_US
dc.citation.epage	0	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000503261500199	en_US
dc.citation.woscount	1	en_US
顯示於類別：	會議論文