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dc.contributor.authorSung, P-Jen_US
dc.contributor.authorSu, C-Jen_US
dc.contributor.authorLu, D. D.en_US
dc.contributor.authorLuo, S-Xen_US
dc.contributor.authorKao, K-Hen_US
dc.contributor.authorCiou, J-Yen_US
dc.contributor.authorJao, C-Yen_US
dc.contributor.authorHsu, H-Sen_US
dc.contributor.authorWang, C-Jen_US
dc.contributor.authorHong, T-Cen_US
dc.contributor.authorLiao, T-Hen_US
dc.contributor.authorFang, C-Cen_US
dc.contributor.authorWang, Y-Sen_US
dc.contributor.authorHuang, H-Fen_US
dc.contributor.authorLi, J-Hen_US
dc.contributor.authorHuang, Y-Cen_US
dc.contributor.authorHsueh, F-Ken_US
dc.contributor.authorWu, C-Ten_US
dc.contributor.authorMa, W. C-Yen_US
dc.contributor.authorHuang, K-Pen_US
dc.contributor.authorLee, Y-Jen_US
dc.contributor.authorChao, T-Sen_US
dc.contributor.authorLi, J-Yen_US
dc.contributor.authorWu, W-Fen_US
dc.contributor.authorYeh, W-Ken_US
dc.contributor.authorWang, Y-Hen_US
dc.date.accessioned2020-02-02T23:55:33Z-
dc.date.available2020-02-02T23:55:33Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0942-8en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/153667-
dc.description.abstractOmega-gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher I-ON, smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA.en_US
dc.language.isoen_USen_US
dc.titleFabrication of Omega-gated Negative Capacitance FinFETs and SRAMen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000503374900020en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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