標題: | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
作者: | You, Wei-Xiang Su, Pin Hu, Chenming 電子工程學系及電子研究所 國際半導體學院 Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
關鍵字: | Ferroelectric field-effect transistor FET;negative-capacitance FET (NCFET);FinFET;nonvolatile SRAM (nvSRAM);nonvolatile memory |
公開日期: | 1-一月-2020 |
摘要: | This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption. |
URI: | http://dx.doi.org/10.1109/JEDS.2020.2972319 http://hdl.handle.net/11536/154163 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2020.2972319 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 8 |
Issue: | 1 |
起始頁: | 171 |
結束頁: | 175 |
顯示於類別: | 期刊論文 |