標題: A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
作者: You, Wei-Xiang
Su, Pin
Hu, Chenming
電子工程學系及電子研究所
國際半導體學院
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: Ferroelectric field-effect transistor FET;negative-capacitance FET (NCFET);FinFET;nonvolatile SRAM (nvSRAM);nonvolatile memory
公開日期: 1-Jan-2020
摘要: This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption.
URI: http://dx.doi.org/10.1109/JEDS.2020.2972319
http://hdl.handle.net/11536/154163
ISSN: 2168-6734
DOI: 10.1109/JEDS.2020.2972319
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 8
Issue: 1
起始頁: 171
結束頁: 175
Appears in Collections:Articles